Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes
with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results
are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this
paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can
be deduced from the simulations.
Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies